METHOD FOR HIGH-TEMPERATURE ANNEALING A MULTILAYER WAFER

摘要

The invention concerns a method for annealing a multilayer wafer under high temperatures, said method comprising a high temperature treatment with the following phases : At least a temperature ramp-up between a boat-in temperature and a process temperature in the range of high temperatures, at least a processing phase in the range of high temperatures, a temperature ramp-down from said processing phase to a boat-out temperature, characterized in that said boat-in temperature has a "lowered" value which is significantly lower than said boat-out temperature, so that the lowered value of boat-in temperature allows avoiding tearing-off defects on the wafers and reducing the amount of particle contaminants on the wafer, while said boat-out temperature is kept at a value significantly greater than said lowered value of boat-in temperature, in order to avoid degrading the Dit of said wafer.