发明名称 |
Conducting structure manufacturing method for integrated circuit arrangement, involves superimposing nucleation layer at base surface or cover surface before or after creation of through-hole, and depositing structure material in hole |
摘要 |
<p>The method involves creating a through-hole (403) through a substrate of an integrated circuit arrangement, where the hole passes from a cover surface to a base surface of the arrangement. An electrically conductive nucleation layer (402) is superimposed at the base surface or cover surface before or after creating the hole. An electrically conductive material of a conducting structure is galvanically deposited in the hole. An independent claim is also included for an integrated circuit arrangement comprising a conducting structure.</p> |
申请公布号 |
DE102005004365(A1) |
申请公布日期 |
2006.08.10 |
申请号 |
DE20051004365 |
申请日期 |
2005.01.31 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
STEINLESBERGER, GERNOT;STEINHOEGL, WERNER;DUESBERG, GEORG;SCHINDLER, GUENTHER |
分类号 |
H01L21/768;H01L23/522 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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