LOW-TEMPERATURE-GROWN (LTG) INSULATED-GATE PHEMT DEVICE AND METHOD
摘要
<p>A pseudomorphic-high-electron-mobility-transistor (PHEMT) includes a substrate, a low-temperature-grown (LTG) GaAs gate-insulator layer disposed on the substrate, and a gate electrode disposed on the gate-insulator layer.</p>
申请公布号
WO2006083383(A2)
申请公布日期
2006.08.10
申请号
WO2005US43357
申请日期
2005.12.01
申请人
EGRATION, INC. BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INT;NICHOLS, KIRBY, B;ACTIS, ROBERT;XU, DONG;KONG, WENDELL, M., T.
发明人
NICHOLS, KIRBY, B;ACTIS, ROBERT;XU, DONG;KONG, WENDELL, M., T.
