| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor element which can prevent the threshold voltage of a cell from dropping; and a manufacturing method thereof. <P>SOLUTION: A method of manufacturing a semiconductor element having a stepped gate comprises: a step of preparing a semiconductor substrate 21 having a first active region 101A and a second active region 102 that is formed at a position higher than the first active region 101A; a step of rounding the boundary region between the first active region 101A and the second active region 102; a step of forming a gate insulating film 31 on the entire substrate including the rounded boundary region; a step of forming a gate pattern 200 which has a stepped structure extending from a portion of the first active region 101A to a portion of the second active region 102 on the gate insulating film 31 on the boundary region; a step of forming gate spacers 34 and 35 on both sidewalls of the gate pattern 200; and a step of forming a first cell junction 36A in the first active region 101A and a second cell junction 36B in the second active region 102. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
