| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid state imaging device and the manufacturing method thereof wherein the suppression of the increase is obtained in the consumption power of its each drain region. SOLUTION: The solid state imaging device has a semiconductor substrate 1 having a plurality of light receivers arranged in an one-dimensional way or in a two-dimensional way, each vertical transfer for transferring in the vertical direction the read signal charges from the light receivers, a horizontal transfer for transferring in the horizontal direction the signal charges transferred by the vertical transfers, each barrier region 5 adjacent to the horizontal transfer and so formed as to pass therethrough only the excess charge of the horizontal transfer, each drain region 6 adjacent to each barrier region 5 and for exhausting the excess charge passed through each barrier region 5, and each insulating layer 8 adjacent to each drain region 6. Further, in this solid photographing apparatus, each drain region 6 is so formed as to position its partial portion in the under layer of each insulating layer 8. COPYRIGHT: (C)2006,JPO&NCIPI |
