| 摘要 |
PROBLEM TO BE SOLVED: To provide a process for producing an SOI wafer in which an SOI layer has high uniformity in film thickness by preventing occurrence of heat distortion, stripping, cracking, and the like, of a transparent insulating substrate and the SOI layer through a simple process. SOLUTION: An SOI wafer is obtained by implanting ions into a single crystal silicon wafer to form an ion implantation layer, processing the ion implantation surface of the single crystal silicon wafer and/or the surface of a transparent insulating substrate with plasma and/or ozone, bonding the ion implantation surface of the single crystal silicon wafer and the surface of the transparent insulating substrate tightly on the processed surface under room temperature, and then stripping the single crystal silicon wafer mechanically by applying impact to the ion implantation layer thereby forming an SOI layer on the transparent insulating substrate. The SOI wafer thus obtained is heat treated in order to planarize the surface of the SOI layer under atmosphere of inert gas, hydrogen gas or the mixture gas thereof. COPYRIGHT: (C)2006,JPO&NCIPI
|
