| 摘要 |
PROBLEM TO BE SOLVED: To obtain a heterojunction semiconductor device for operating in a normally off state. SOLUTION: The heterojunction device has a semiconductor lower layer 26 made of p-type gallium nitride, a semiconductor upper layer 28 made of n-type AlGaN which is subjected to a heterojunction to the surface of the semiconductor lower layer 26 and has a band gap larger than the one of the semiconductor lower layer 26, a drain electrode 32 formed in one portion of the surface of the semiconductor upper layer 28, a source electrode 34 formed in the other portion of the surface of the semiconductor upper layer 28, and a gate electrode 36 contacted electrically with the semiconductor lower layer 26. COPYRIGHT: (C)2006,JPO&NCIPI
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