| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device of which characteristic do not vary even if it is given by a light, and to provide its manufacturing method. SOLUTION: The semiconductor device is provided with a semiconductor layer 10, an insulating gate field effect transistor 20 formed in the semiconductor layer 10, an etching stopper film 32 formed above the insulating gate field effect transistor 20, and an interlayer insulating stopper film 34 formed above the etching stopper film 32. The insulating gate field effect transistor 20 is provided with the gate insulating layer 22 formed above the semiconductor layer 10, a gate electrode 24 formed above the gate insulating layer 22, and an impurity area 28 formed in the semiconductor layer 10 as a source area or a drain area. A removed area 34 is provided outside the gate insulating layer 22 and above an area other than a position pinched by the gate insulating layer 22 and the impurity area 28, and the removed area 34 is formed by removing the etching stopper film 32. COPYRIGHT: (C)2006,JPO&NCIPI
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