| 摘要 |
PROBLEM TO BE SOLVED: To provide a refining method for simply removing a chlorine-containing compound which is an impurity contained in trimethylsilane useful as a film-forming raw material in semiconductor production in high yield. SOLUTION: Trimethylsilane containing the impurity is brought into contact with an absorbing solution having pH 2-4 to absorb and remove the chlorine-containing compound in trimethylsilane. COPYRIGHT: (C)2006,JPO&NCIPI
|
