发明名称 Doping method and method of manufacturing field effect transistor
摘要 A doping method comprising the steps of; obtaining a proportion X of ions of a compound including a donor or an acceptor impurity in total ions from mass spectrum by using a first source gas of a first concentration; analyzing a peak concentration Y of the compound in a first processing object which is doped by using a second source gas of a second concentration equal to or lower than the first concentration, referring to a dose amount of total ions as Do and setting an acceleration voltage at a value, obtaining a dose amount D<SUB>1 </SUB>of total ions from a expression, Y=(D<SUB>1</SUB>/D<SUB>0</SUB>)(aX+b), and doping a second processing object with the donor or the acceptor impurity by a ion doping apparatus using a third source gas, wherein a dose amount of total ions is set at D<SUB>1</SUB>, and an acceleration voltage is set at the value.
申请公布号 US2006177996(A1) 申请公布日期 2006.08.10
申请号 US20060346378 申请日期 2006.02.03
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 KOEZUKA JUNICHI;SUZUKI NAOKI
分类号 H01L21/26;H01L21/42 主分类号 H01L21/26
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