Power semiconductor component, has surface electrodes connected to one semiconductor layer in such a manner that lateral running series circuit of MOS diodes is formed, where electrodes lie partially directly on layer

摘要

The component has a semiconductor body, in which a peripheral area (4) exhibits semiconductor layers (5, 6). Trenches (7) pierce through the layer (6), where trench electrodes are electrically isolated against the body by insulation layers (9). Surface electrodes (10) are connected to the layer (6) in such a manner that a lateral running series circuit of MOS diodes is formed. The electrodes lie partially directly on the layer (6). An independent claim is also included for a method for manufacturing a semiconductor component.