| 摘要 |
<p>Method for production of semiconductor chips, especially radiation emitting chips, including at least one epitaxially produced stack of semiconductor chips, involves preparation of an epitaxially produced growth substrate, the semiconductor wafer (SW), formation of a separation layer parallel to a main (100) surface of the SW, connection of the SW to an auxiliary support wafer (2), and separation of an opposite section of the SW, relative to a separation area, from wafer (2). An epitaxial growth surface is formed on section (12) of the epitaxial growth support surface remaining on wafer (2) for subsequent epitaxial growth of the semiconductor layer sequence. A semiconductor layer sequence (5) is grown on the epitaxial growth surface, with deposition of a chip substrate wafer on the semiconductor layer sequence, wafer (2) is separated, and the composite semiconductor layer sequence and chip substrate wafer (7) are divided into individually separated semiconductor chips.</p> |
