| 摘要 |
PROBLEM TO BE SOLVED: To enhance the crystal quality of semiconductor layers that has different compositions, while suppressing deterioration in the throughput. SOLUTION: Under a state where the film deposition temperature is set at H1, Si<SB>2</SB>H<SB>6</SB>gas and GeH<SB>4</SB>gas are introduced into a chamber and an SiGe layer is grown epitaxially on a semiconductor substrate 1. Upon the finishing of the deposition of the SiGe layer, GeH<SB>4</SB>gas supply is interrupted, while sustaining Si<SB>2</SB>H<SB>6</SB>gas supply, thus epitaxially growing a part of an Si layer on the SiGe layer at the film deposition temperature H1. After a part of the Si layer has been deposited on the SiGe at the film deposition temperature H1, Si<SB>2</SB>H<SB>6</SB>gas supply is interrupted, and the temperature inside the chamber is raised. When the film deposition temperature reaches H2, Si<SB>2</SB>H<SB>6</SB>gas is re-introduced into the chamber and the Si layer is grown epitaxially on the SiGe layer. COPYRIGHT: (C)2006,JPO&NCIPI
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