| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device with the electric field imposed on its gate insulating film relaxed so as to reduce the leakage current, and to enhance the drive current. SOLUTION: The semiconductor device is equipped with gate insulating films 2 and 3 formed in an element forming region on a semiconductor substrate 1, a gate electrode 4 formed through the intermediary of the gate insulating films 2 and 3, and source layers 6a and 6b and drain layers 7a and 7b, which are formed in element forming regions located on both the sides of the gate electrode 4. The gate insulating films 2 and 3 are formed of at least two layers so as to become gradually high in permittivity in a direction from the drain layers 7a and 7b along the source layers 6a and 6b, so that electric field applied to the gate insulating films 2 and 3 is relaxed to so as to reduce the leakage current. COPYRIGHT: (C)2006,JPO&NCIPI
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