SEMICONDUCTOR DEVICE

摘要

On the surface of a drift layer (102), a carrier extracting region (112) containing a P-type impurity is formed to be brought into contact with a P-type body region (110). The depth (distance X<SUB>1</SUB>) of the carrier extracting region (112) from the surface of the drift layer (102) is less than the depth (distance X<SUB>2</SUB>) of a trench (106) from the surface of the drift layer (102). A small number of carriers, which have been injected into the drift layer (102) while a semiconductor device (1a) is operated, flow into the carrier extracting region (112).