| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent the composition deviation of a capacitance insulating film by suppressing the thermal diffusion of a metal element for composing the capacity insulating film into a lower electrode, when film-forming the capacity insulating film made of a ferroelectric or a high dielectric by using a method where temperature in film formation in an MOCVD method, or the like becomes approximately 300°C or higher. <P>SOLUTION: In a capacitor, where the lower electrode 10, the capacity insulating film 11, and an upper electrode 12 are formed in this order along at least the sidewall section and bottom section of a hole 8 formed in a first interlayer insulating film 7, a sacrifice layer 9 containing at least one type of element in metal elements for composing the capacity insulating film 11 is formed between a part formed at the sidewall section of the hole 8 in the lower electrode 10 and the first interlayer insulating film 7. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
