| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a system and a method for exposure that can easily find a correction exposure quantity and a position shift correction value for a shot region. <P>SOLUTION: The exposure method includes a step S1 of finding an MEF of a reticle 3 at a plurality of points in an exposure field 11, a step S2 of dividing the exposure field 11 into a plurality of blocks 11a according to the value of the MEF, and a step S3 of calculating an exposure correction quantity for each of the blocks 11a while taking into consideration size variation of a resist pattern accompanying size variation of a light shield pattern 3a, by utilizing the value of the MEF at each of a plurality of blocks 11a. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
