| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve characteristics of a light emitting device by preventing generation of misfit dislocation and edge dislocation and raising crystallinity. <P>SOLUTION: A region changes its composition for relaxing a lattice constant of a barrier layer 41 and a well layer 43. The region is provided by using a ternary or binary compound of a group III nitride compound semiconductor between clad layers 3, 5 or the barrier layer 41 and the well layer 43, or in a junction to the well layer 43 inside the clad layers 3, 5 or the barrier layer 41. For example, the composition is changed in the order of AlGaN to GaN to InGaN. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
