| 摘要 |
PROBLEM TO BE SOLVED: To provide a strained silicon wafer for further reducing through dislocation density in a strained silicon layer. SOLUTION: The strained silicon wafer is in a structure, having an epitaxial layer with lattice mismatching and a strained Si layer 3 on a single-crystal silicon substrate 1, and uses an off-cut surface where the crystal surface of the silicon surface 1 inclines by 0.01°-0.05°to the directions of crystal orientation <100> and <0-10> from a plane orientation of (100) plane. COPYRIGHT: (C)2006,JPO&NCIPI
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