发明名称 High voltage generating circuit and method and semiconductor memory device including the circuit
摘要 A first pump circuit is coupled to a first pump signal line and is configured to generate a first voltage greater than a power supply voltage at an output thereof responsive to transition of the first pump signal line from a ground voltage to the power supply voltage. A second pump circuit includes a first switching circuit configured to couple a first capacitor between the output of the first pump circuit and a ground voltage node responsive to the transition of a first pump signal line from the ground voltage to the power supply voltage to charge the first capacitor to the first voltage, and to couple a second capacitor between the first capacitor and a second pump signal line responsive to a transition of the second pump signal line from the ground voltage to the power supply voltage to generate a second voltage greater than the first voltage.
申请公布号 US2006176103(A1) 申请公布日期 2006.08.10
申请号 US20060328891 申请日期 2006.01.10
申请人 CHEON KWUN-SOO 发明人 CHEON KWUN-SOO
分类号 G05F1/10 主分类号 G05F1/10
代理机构 代理人
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