WIRING PATTERN FORMING METHOD AND MASK USED THEREIN

摘要

PROBLEM TO BE SOLVED: To provide a pattern forming method capable of securing the wide margin of exposure in test pattern formation and a mask used for the execution.

SOLUTION: As a mask for the exposure of the first time, rectangular areas for which a macro pattern block width 3101 is 7 μm and a macro pattern block height 3102 is 500 μm are formed at a prescribed pitch on a chromium film 3100 formed on a glass substrate (Fig. (a)). Inside the area, the bundle of fine wiring ≤0.1 μm exists as the object of process evaluation.

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