| 摘要 |
<P>PROBLEM TO BE SOLVED: To manufacture a precise semiconductor element by suppressing the influence of treatment due to the warpage of a substrate. <P>SOLUTION: A semiconductor manufacturing apparatus comprises a heating stage 1 for placing a wafer 2 for forming the semiconductor element on a placement surface; a spacer 11 for forming a prescribed gap between the wafer 2 placed on the heating stage 1 and the placement surface; and a diaphragm 4 for adjusting the gap between the placement surface of the heating stage 1 and the wafer 2 by gas pressure. A semiconductor manufacturing method is used to adjust the gap with gas pressure while a prescribed gap is being formed between the placement surface of the heating stage 1 and the wafer 2 in a method for forming the semiconductor element by placing the wafer 2 on the placement surface of the heating stage 1. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
