| 摘要 |
PROBLEM TO BE SOLVED: To provide a high voltage transistor structure capable of simultaneous optimizing of breakdown voltage in both on and off states of a device. SOLUTION: The high voltage transistor comprises first and second trenches for specifying mesa of a semiconductor substrate. First and second field plate members are arranged in the first and second trenches respectively, with each of first and second field plate members separated from the mesa by a dielectric layer. The mesa comprises a plurality of sections, and each section has substantially constant doping concentration gradient. The gradient of one section is steeper than the gradient of other section by at least 10%. COPYRIGHT: (C)2006,JPO&NCIPI |
