| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma processing apparatus and a processing method capable of keeping processed shapes constant. SOLUTION: The plasma processing apparatus is provided with a processing container 1a that forms a processing chamber 1, processing gas supply devices 3, 4 that supply processing gas into chamber 1, plasma generating means 2 that supplies electromagnetic energy into the processing chamber and dissociates the processing gas supplied into the processing chamber to generate plasma, and means 12 that heats or cools vacuum processing vessel, and performs plasma processing on a wafer carried-in the processing chamber. A processing chamber surface temperature control unit 15 that controls an internal surface temperature in the processing chamber is provided in the plasma processing apparatus. The control unit controls the internal surface temperature by generating the plasma in the processing chamber in a processing time preset, in accordance with a processing history and heating the internal surface of the processing chamber prior to a wafer processing, after finishing a cleaning treatment. COPYRIGHT: (C)2006,JPO&NCIPI
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