SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To inhibit that a leakage current occurs by a crystal defect by a distortion at the time of operating a semiconductor device in a semiconductor device using a gallium nitride compound semiconductor layer. SOLUTION: The semiconductor device has a gate insulating film 13 between a channel layer 12 consisting of a gallium nitride compound semiconductor layer and a gate electrode 17. The gate insulating film 13 consists of a gallium nitride in which arsenic is added. COPYRIGHT: (C)2006,JPO&NCIPI