| 摘要 |
PROBLEM TO BE SOLVED: To provide a dry etching method capable of etching precisely by solving the problems wherein etching reaction products are deposited and etching cannot be made precisely for the dry etching method for performing micromachining. SOLUTION: In the dry etching method for etching an Si substrate 1 by patterning an etching-resistant film at the surface side of a patterning film formed on the Si substrate 1, etching reaction products cannot be generated easily since an etching stopper layer 4 is made of a material that cannot be etched easily even if etching advances up to the etching stopper layer 4, and the etching stopper layer 4 can be separated easily since it is formed by an organic-based material for performing etching precisely and inexpensively by an etching method by providing the etching stopper layer 4 made of the organic-based material on a surface at a side where no etching-resistant films are formed. COPYRIGHT: (C)2006,JPO&NCIPI
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