发明名称 OXIDE SEMICONDUCTOR, METHOD OF MANUFACTURING SAME, AND DISPLACEMENT SENSOR
摘要 PROBLEM TO BE SOLVED: To provide a low cost displacement sensor in which spatial and time precision can be improved, and to provide an oxide semiconductor for it and its manufacturing method. SOLUTION: A plurality of first leads 2, and a plurality of second leads 3 which intersect each first lead 2, are provided. A diode 4 connected to the above both is provided on the intersection of the first lead 2 and the second lead 3. A first switch SW1 for sequentially switching and applying a voltage for detection to the first lead 2, and second switches SW11-14 for sequentially switching the conduction/non-conduction of each second lead 3, are provided. A detection unit 6 and an operation unit 7 are provided for detecting and calculating the mutual displacement of each intersection by detecting the above voltage for detection from each second lead 3. The diode 4 is an oxide semiconductor of two layer structure film having a first layer mainly containing a zinc oxide formed by the low temperature oxidation of the copper-zinc alloy, and a second layer which is mainly a copper oxide. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006210434(A) 申请公布日期 2006.08.10
申请号 JP20050017446 申请日期 2005.01.25
申请人 HOKKAIDO UNIV 发明人 MIURA SEIJI;MORI TETSUO;OKUBO KENJI
分类号 H01L29/861;G01B7/00;H01L21/205;H01L29/12 主分类号 H01L29/861
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