发明名称 Light emitting diode and method for fabricating the same
摘要 A light emitting diode and a method for fabricating the same are provided. The light emitting diode includes: a transparent substrate (51); a semiconductor material layer (53, 55, 57) formed on the top surface of a substrate with an active layer (57) generating light; and a fluorescent layer (54) formed on the back surface of the substrate with different thicknesses. The ratio of light whose wavelength is shifted while propagating through the fluorescent layer and the original light generated in the active layer can be controlled by adjusting the thickness of the fluorescent layer, to emit desirable homogeneous white light from the light emitting diode.
申请公布号 EP1394867(A3) 申请公布日期 2006.08.09
申请号 EP20030253717 申请日期 2003.06.12
申请人 SAMSUNG ELECTRO-MECHANICS CO. LTD. 发明人 KWAK, JOON-SEOP;CHO, JAE-HEE
分类号 C09K11/56;C09K11/64;C09K11/72;C09K11/78;C09K11/79;C09K11/80;C09K11/84;H01L33/32;H01L33/44;H01L33/50 主分类号 C09K11/56
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