Gate of transistor and method for the same, Non- volatile Memory device and method for the same,申请号KR20040113757-传众专利搜索

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发明名称	Gate of transistor and method for the same, Non- volatile Memory device and method for the same
摘要
申请公布号	KR100611140(B1)	申请公布日期	2006.08.09
申请号	KR20040113757	申请日期	2004.12.28
申请人		发明人
分类号	H01L21/8247;H01L27/115	主分类号	H01L21/8247
代理机构		代理人
主权项
地址

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