| 摘要 |
999,426. Semi-conductor devices. INTERMETALL GES. FUR METALLURGIE UND ELEKTRONIK m.b.H. April 4, 1962 [May 12, 1961], No. 13052/62. Heading H1K. An electrode is formed on a semi-conductor body by producing an insulating layer over part of the body, providing an electrode layer extending over the insulating layer into contact with the semi-conductor and then heating to alloy the contacting part of the layer to the semi-conductor. A plurality of mesa-type transistors are made by first diffusing donor impurity into one face of a P-type germanium layer to form an N-type layer which is then subdivided into uniformly spaced mesas 2 (Figs. 2 and 3) by etching. Insulating layers 3 partially extending over the ends of each mesa are then provided by vacuum evaporation of silica through a mask. Layers 4a and 4b later to form the emitters and base respectively are next vapour deposited on the insulation in two separate steps, layers 4a being of aluminiumgermanium or aluminium and layers 4b of gold-antimony with or without an admixture of germanium. The assembly is heated to 500‹ C. to alloy the layers to the mesas and a further protective layer of quartz evaporated over the resulting assemblies. Finally the wafer is subdivided by etching into single mesa devices to which collector electrodes are attached. |
