发明名称 |
SOLAR CELL |
摘要 |
A solar cell including a light-absorption layer of a compound semiconductor with a chalcopyrite crystal structure and having excellent characteristics such as conversion efficiency is provided. The solar cell includes a first electrode layer, a second electrode layer, a p-type semiconductor layer interposed between the first electrode layer and the second electrode layer, and an n-type semiconductor layer interposed between the p-type semiconductor layer and the second electrode layer. The p-type semiconductor layer includes a compound semiconductor containing a group Ib element, a group IIIb element and a group VI element and having a chalcopyrite structure. The bandgap of the p-type semiconductor layer increases from the n-type semiconductor layer side to the first electrode layer side monotonically. The bandgap of the p-type semiconductor layer on the main surface at the n-type semiconductor layer side is at least 1.08 eV, and the bandgap of the p-type semiconductor layer on the main surface at the first electrode layer side is at least 1.17 eV. In the p-type semiconductor layer, a first region at the n-type semiconductor layer side and a second region at the first electrode layer side are different from each other in bandgap increase rate in a direction of thickness of the p-type semiconductor layer. |
申请公布号 |
EP1619728(A4) |
申请公布日期 |
2006.08.09 |
申请号 |
EP20040726779 |
申请日期 |
2004.04.09 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
SATOH, TAKUYA;NEGAMI, TAKAYUKI;HASHIMOTO, YASUHIRO |
分类号 |
H01L31/072;H01L31/032;H01L31/0336;H01L31/0749 |
主分类号 |
H01L31/072 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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