发明名称 |
SEMICONDUCTOR ARRANGEMENT WITH OHMIC CONTACT AND A METHOD FOR CONTACTING A SEMICONDUCTOR ARRANGEMENT |
摘要 |
<p>A semiconductor configuration with an ohmic contact-connection includes a p-conducting semiconductor region made of silicon carbide. A p-type contact region serves for the contact-connection. The p-type contact region is composed of a material containing at least nickel and aluminum. A substantially uniform material composition is present in the entire p-type contact region. A method for contact-connecting p-conducting silicon carbide with a material containing at least nickel and aluminum is also provided. The two components nickel and aluminum are applied simultaneously on the p-conducting semiconductor region.</p> |
申请公布号 |
EP1095410(B1) |
申请公布日期 |
2006.08.09 |
申请号 |
EP19990938134 |
申请日期 |
1999.06.07 |
申请人 |
SICED ELECTRONICS DEVELOPMENT GMBH & CO KG |
发明人 |
FRIEDRICHS, PETER;PETERS, DETHARD;SCHOERNER, REINHOLD |
分类号 |
H01L21/28;H01L29/45;H01L21/04;H01L29/24;H01L29/772 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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