发明名称 SEMICONDUCTOR ARRANGEMENT WITH OHMIC CONTACT AND A METHOD FOR CONTACTING A SEMICONDUCTOR ARRANGEMENT
摘要 <p>A semiconductor configuration with an ohmic contact-connection includes a p-conducting semiconductor region made of silicon carbide. A p-type contact region serves for the contact-connection. The p-type contact region is composed of a material containing at least nickel and aluminum. A substantially uniform material composition is present in the entire p-type contact region. A method for contact-connecting p-conducting silicon carbide with a material containing at least nickel and aluminum is also provided. The two components nickel and aluminum are applied simultaneously on the p-conducting semiconductor region.</p>
申请公布号 EP1095410(B1) 申请公布日期 2006.08.09
申请号 EP19990938134 申请日期 1999.06.07
申请人 SICED ELECTRONICS DEVELOPMENT GMBH & CO KG 发明人 FRIEDRICHS, PETER;PETERS, DETHARD;SCHOERNER, REINHOLD
分类号 H01L21/28;H01L29/45;H01L21/04;H01L29/24;H01L29/772 主分类号 H01L21/28
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