发明名称 |
ELECTRONIC DEVICE, SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
<p>The present invention provides a manufacturing process using a droplet-discharging method that is suitable for manufacturing a large substrate in mass production. A photosensitive material solution of a conductive film is selectively discharged by a droplet-discharging method, selectively exposed to laser light, and developed or etched, thereby allowing only the region exposed to laser light to be left and realizing a source wiring and a drain wiring having a more microscopic pattern than the pattern itself formed by discharging. One feature of the source wiring and the drain wiring is that the source wiring and the drain wiring cross an island-like semiconductor layer and overlap it.</p> |
申请公布号 |
KR20060089144(A) |
申请公布日期 |
2006.08.08 |
申请号 |
KR20060009546 |
申请日期 |
2006.02.01 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY K.K. |
发明人 |
MAEKAWA SHINJI;KUWABARA HIDEAKI |
分类号 |
H01L29/786 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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