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发明名称
Method of forming a floating gate electrode in flash memory device
摘要
申请公布号
KR100609578(B1)
申请公布日期
2006.08.08
申请号
KR20040114136
申请日期
2004.12.28
申请人
发明人
分类号
H01L21/8247;H01L21/28;H01L21/336;H01L27/115
主分类号
H01L21/8247
代理机构
代理人
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EXTRACTOR
