发明名称 |
Magnetic sensor based on efficient spin injection into semiconductors |
摘要 |
A magnetic sensor based on efficient spin injection of spin-polarized electrons from ferromagnets into semiconductors and rotation of electron spin under a magnetic field. Previous spin injection structures suffered from very low efficiency (less than 5). A spin injection device with a semiconductor layer sandwiched between delta-doped layers and ferromagnets allows for very high efficient (close to 100%) spin polarization to be achieved at room temperature, and allows for high magneto-sensitivity and very high operating speed, which in turn allows devising ultra fast and sensitive magnetic sensors.
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申请公布号 |
US7087971(B2) |
申请公布日期 |
2006.08.08 |
申请号 |
US20040880058 |
申请日期 |
2004.06.28 |
申请人 |
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. |
发明人 |
OSIPOV VLATCHESLAV V.;BRATKOVSKI ALEXANDRE M. |
分类号 |
H01L29/76;G01R33/06;G11C11/34 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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