发明名称 |
193nm resist with improved post-exposure properties |
摘要 |
Acid-catalyzed positive resist compositions which are imageable with 193 nm radiation and/or possibly other radiation and are developable to form resist structures of improved development characteristics and improved etch resistance are enabled by the use of resist compositions containing imaging polymer component comprising an acid-sensitive polymer having a monomeric unit with a pendant group containing a remote acid labile moiety.
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申请公布号 |
US7087356(B2) |
申请公布日期 |
2006.08.08 |
申请号 |
US20020261249 |
申请日期 |
2002.09.30 |
申请人 |
JSR CORPORATION |
发明人 |
KHOJASTEH MAHMOUD H.;CHEN KUANG-JUNG;VARANASI PUSHKARA RAO;NISHIMURA YUKIO;KOBAYASHI EIICHI |
分类号 |
G03C1/73;G03F7/039;G03F7/20;G03F7/30;G03F7/36;G03F7/38 |
主分类号 |
G03C1/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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