发明名称 Bank based self refresh control apparatus in semiconductor memory device and its method
摘要 A partial array self refresh (PASR) control apparatus for use in a semiconductor memory device having a plurality of banks includes: a bank deselection unit having a plurality of bank deselection signal output units for receiving a plurality of PASR code signals, wherein input terminal lines of each bank deselection signal output unit and signal lines of the plurality of PASR code signals are crossed each other and are selectively coupled each other.
申请公布号 US7088635(B2) 申请公布日期 2006.08.08
申请号 US20040027195 申请日期 2004.12.30
申请人 HYNIX SEMICONDUCTOR, INC. 发明人 HUR HWANG;KIM TAE-YUN
分类号 G11C7/00;G11C11/401;G11C11/406 主分类号 G11C7/00
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