发明名称 Wafer stacking with anisotropic conductive adhesive
摘要 The present invention includes a method that provides a first wafer; forms a first raised contact from a first plug on the first wafer; provides a second wafer; forms a second raised contact from a second plug on the second wafer; applies an anisotropic conductive adhesive over the first wafer; aligns the second wafer to the first wafer; attaches the second wafer to the anisotropic conductive adhesive to form a continuous and conductive path between the first raised contact and the second raised contact. The present invention also includes a structure that has an anisotropic conductive film, the anisotropic conductive film has a front surface and a rear surface; a first raised contact is located over the front surface, the first raised contact forming part of a first wafer; and a second raised contact located over the rear surface, the second raised contact forming part of a second wafer, where the second raised contact faces the first raised contact.
申请公布号 US7088005(B2) 申请公布日期 2006.08.08
申请号 US20030749890 申请日期 2003.12.31
申请人 INTEL CORPORATION 发明人 LEE KEVIN J.
分类号 H01L23/48;H01L21/44;H01L21/60;H01L23/485;H01L23/52;H01L25/065;H01L29/40 主分类号 H01L23/48
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