发明名称 |
Semiconductor device having reduced capacitance to substrate and method |
摘要 |
In one embodiment, a matrix of free-standing semiconductor shapes are oxidized to form a low capacitance isolation tub. The adjacent rows of shapes in the matrix are offset with respect to each to minimize air gap and void formation during tub formation. In a further embodiment, the spacing between adjacent rows is less than the spacing between shapes within a row.
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申请公布号 |
US7087925(B2) |
申请公布日期 |
2006.08.08 |
申请号 |
US20040773853 |
申请日期 |
2004.02.09 |
申请人 |
SEMICONDUCTOR COMPONENTS INDUSTRIES, L.L.C. |
发明人 |
GRIVNA GORDON M. |
分类号 |
H01L21/76;H01L29/00;H01L21/02;H01L21/316;H01L21/762;H01L21/763;H01L21/822;H01L27/04;H01L29/06 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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