发明名称 |
Method for scalable, low-cost polysilicon capacitor in a planar DRAM |
摘要 |
Capacitor structures that have increased capacitance without compromising cell area are provided as well as methods for fabricating the same. A first capacitor structure includes insulating material present in holes that are formed in a semiconductor substrate, where the insulating material is thicker on the bottom wall of each capacitor hole as compared to the sidewalls of each hole. In another capacitor structure, deep capacitor holes are provided that have an isolation implant region present beneath each hole.
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申请公布号 |
US7087486(B2) |
申请公布日期 |
2006.08.08 |
申请号 |
US20040963228 |
申请日期 |
2004.10.12 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BROWN JEFFREY S.;MANN RANDY W. |
分类号 |
H01L21/8242;H01L27/02;H01L27/12 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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