发明名称 Direct conversion receiver using vertical bipolar junction transistor available in deep n-well CMOS technology
摘要 This invention is about the direct conversion receiver. It is excellent the receiving sensitivity that DC off-set, matching characteristics of the relationship of I/Q circuits and noise characteristics are improved. In order to achieve this purpose, the direct conversion receiver uses vertical bipolar junction transistor available in standard triple-well CMOS technology in the switching element of mixer and base-band analog circuits. Furthermore, as using the passive mixer in the other practical example of this invention, this invention controls the occurrence of l/f noise. As using the vertical bipolar junction transistor available in standard triple-well CMOS in the base-band analog circuits, this invention realizes the direct conversion receiver that DC off-set, matching characteristics of the relationship of I/Q circuit and noise characteristics are improved.
申请公布号 US7088168(B2) 申请公布日期 2006.08.08
申请号 US20040504366 申请日期 2004.08.12
申请人 KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY 发明人 LEE KWYRO;NAM ILKU
分类号 G06G7/12;H01L21/8249;H01L27/06;H03D7/14;H04B1/26;H04B1/30 主分类号 G06G7/12
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