发明名称 Semiconductor device and manufacturing method for the same
摘要 A semiconductor device and a manufacturing method for the same are provided wherein the reliability of connections of fine metal wires connecting a second semiconductor chip to a wiring board can be improved in the case wherein the second semiconductor chip, which is located above the lower, first semiconductor chip, is significantly larger than the first semiconductor chip in a configuration wherein two semiconductor chips are stacked and mounted on a wiring board. In this semiconductor device the rear surface of the first semiconductor chip and the rear surface of the second semiconductor chip are adhered to each other by means of adhesive and the side of the adhesive is inclined from the edge portions of the first semiconductor chip toward the portions of the second semiconductor chip extending from the side of the first semiconductor chip. Therefore, it becomes possible to prevent the occurrence of microcracks in the second semiconductor chip and to prevent the occurrence of defective fine metal wire connections caused by the impact at the time of electrical connection of the second semiconductor chip to the wiring board.
申请公布号 US7087455(B2) 申请公布日期 2006.08.08
申请号 US20030636595 申请日期 2003.08.08
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 FUKUDA TOSHIYUKI;FUJIMOTO HIROAKI;TSUJI MUTSUO;YUI TAKASHI;TAKEOKA YOSHIAKI
分类号 H01L21/44;H01L25/18;H01L21/56;H01L21/58;H01L21/60;H01L23/31;H01L25/065;H01L25/07;H01L29/06 主分类号 H01L21/44
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