发明名称 High-frequency power amplifier module
摘要 A ground layer is provided between a first and a second wiring layer. A first transistor provided at the first wiring layer amplifies a supplied high-frequency signal. A second transistor provided at the first wiring layer amplifies the output signal of the first transistor. A first power supply line, which supplies power to the first transistor, is provided at the first wiring layer. A second power supply line, which supplies power to the second transistor, is provided at the second wiring layer.
申请公布号 US7088186(B2) 申请公布日期 2006.08.08
申请号 US20050060548 申请日期 2005.02.18
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 SUGIURA MASAYUKI
分类号 H03F3/14;G11C8/00;H01L23/367;H01L23/50;H01L23/52;H01L23/66;H03F3/189 主分类号 H03F3/14
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