发明名称 Electrostatic discharge protection circuit and semiconductor circuit therewith
摘要 An ESD protection circuit is adapted for an integrated circuit with a first power source and a second power source. The ESD protection circuit comprises a first silicon controlled rectifier (SCR), a second silicon controlled rectifier, and a parasitic diode. The gate of the first silicon controlled rectifier is coupled to a first power source, and the gate of the second silicon controlled rectifier is also coupled to the first power source line.
申请公布号 US7087968(B1) 申请公布日期 2006.08.08
申请号 US20050141284 申请日期 2005.05.31
申请人 MACRONIX INTERNATIONAL CO., LTD. 发明人 LAI CHUN-HSIANG;YEH YEN-HUNG;LU CHIA-LING
分类号 H01L23/62 主分类号 H01L23/62
代理机构 代理人
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