发明名称 Electromigration-reliability improvement of dual damascene interconnects
摘要 Metallic reservoirs in the form of passive or dummy vias are used on interconnects as a source or sink for electromigration material, slowing the build up of electromigration-induced mechanical stress. The passive or dummy vias are disposed in a vertical direction from the interconnect (perpendicular to the plane of the interconnect) to so that the reservoirs do not occupy additional space in the interconnect layer. Both apparatus and method embodiments are described.
申请公布号 US7087516(B2) 申请公布日期 2006.08.08
申请号 US20030681522 申请日期 2003.10.07
申请人 INTEL CORPORATION 发明人 HAU-RIEGE STEFAN P.
分类号 H01L21/4763;H01L23/522 主分类号 H01L21/4763
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