发明名称 |
Semiconductor integrated circuit including anti-fuse and method for manufacturing the same |
摘要 |
An anti-fuse is manufactured by forming an isolation region including an insulating material layer buried in a surface of a device formation region on a surface of a semiconductor substrate, and by forming diffusion regions at both sides of the isolation region, then by contacting electrodes to the respective diffusion regions. The anti-fuse is initially in a non-conductive state, and is programmed to be in a permanently conductive state by a simple writing circuit.
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申请公布号 |
US7087974(B2) |
申请公布日期 |
2006.08.08 |
申请号 |
US20040773213 |
申请日期 |
2004.02.09 |
申请人 |
KAWASAKI MICROELECTRONICS INC. |
发明人 |
KUNO ISAMU;KATAGIRI TOMOHARU |
分类号 |
H01L21/82;H01L29/76;G11C17/18;H01L21/762;H01L23/525;H01L27/06 |
主分类号 |
H01L21/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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