发明名称 FORMING METHOD OF FILM PATTERN, FILM PATTERN, RESIST FILM, AND INSULATOR FORMED BY USING THE SAME, SURFACE ACOUSTIC WAVE DEVICE AND MANUFACTURING METHOD OF THE SAME, SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME, CIRCUIT BOARD AND MANUFACTURING METHOD OF THE SAME, SURFACE ACOUSTIC WAVE OSCILLATION DEVICE, ELECTRO-OPTICAL DEVICE, AND ELECTRONIC APPARATUS
摘要 <p>A film pattern forming method is for forming a film pattern on a predetermined region of a substrate that has a predetermined shape. The film pattern forming method includes: rendering a surface of the substrate liquid-repellent; applying droplets of a liquid containing material for forming the film pattern in a margin area of the predetermined region in which the film pattern is to be formed, thereby forming a margin band of the applied droplets and forming a margin band film by drying or hardening the margin band; rendering the surface of the substrate lyophilic; and applying droplets of the liquid in the predetermined region circumscribed by the margin band film and thereby filling the predetermined region.</p>
申请公布号 KR20060088498(A) 申请公布日期 2006.08.04
申请号 KR20060009424 申请日期 2006.01.31
申请人 SEIKO EPSON CORPORATION 发明人 TOYODA NAOYUKI
分类号 H01L21/20;H01L21/027 主分类号 H01L21/20
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