| 摘要 |
A microwave is emitted into a processing vessel (1) from a planar antenna member of an antenna (7) through a dielectric plate (6). With this, a C5F8 gas supplied into the processing vessel (1) from a gas supply member (3) is changed (activated) into a plasma so as to form a fluorine-added carbon film of a certain thickness on a semiconductor wafer (W). Each time a film-forming step of forming a film on one wafer is carried out, a cleaning step and a pre-coating step are carried out. In the cleaning step, the inside of the processing vessel is cleaned with a plasma of an oxygen gas and a hydrogen gas. In the pre-coating step, the C5 F8 gas is changed into a plasma, and a pre-coat film of fluorine-added carbon thinner than the fluorine-added carbon film formed in the film- forming step is formed.
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