Silicon dioxide based material producing method for fabricating integrated circuit, involves forming cavities in silicon dioxide layer by implantation of rare gas, where cavities are located in depth of silicon dioxide portion

摘要

The method involves forming cavities (66) in a silicon dioxide layer (60) by the implantation of a rare gas other than helium or neon at an implantation dose of greater than 101>6 atoms per square centimeter based on desired average diameter of the cavities, where the rare gas is a xenon or krypton or argon. The cavities are located in the depth of a silicon dioxide portion (64). An independent claim is also included for a component comprising metallic tracks and regions separating the metallic tracks.