| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor photoelectric cathode capable of reducing dark emission causing the degradation of detection efficiency and image quality. <P>SOLUTION: A semiconductor layer 14 has a forward mesa inclined surface area MJ where the width of one direction [0-1-1] of a pattern of the semiconductor layer 14 is increased toward an electron emission layer 13. This semiconductor photoelectric cathode C is further has a backward mesa inclined surface area MA where the width of the other direction [01-1] of the pattern of the semiconductor layer 14 is decreased toward the electron emission layer 13. In the forward mesa inclined surface area MJ, dark emission tends to increase in a part where the n-type InP semiconductor layer 14 contacts with the p-type InP electron emission layer 13. However, the forward mesa inclined surface area MJ is covered with a SiN insulation layer 17, whereby it cannot be used as an electron emission source because electrons cannot jump out into a vacuum by penetrating the insulation layer 17. Accordingly, the semiconductor photoelectric cathode C hardly generating dark emission can be formed. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
